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High Mobility Molecular Beam Epitaxy (HMMBE) laboratory @ IOM-CNR, AREA Science Park


The activity of the group is based on the development of high purity III/V semiconductors, with areas of application ranging from coherent transport to nanophotonics, spintronics and detectors.

A collaboration with Elettra Sincrotrone Trieste is aimed at the realization of X-ray detectors with high photon absorption, fast response times, resistance to radiation damage and RT operation. Detectors based on GaAs avalanche photodiodes are developed for applications in next-generation light sources (high brilliance synchrotron radiation and free electron lasers) and medical imaging.

Furthermore, we are part of two H2020 projects. The first is aimed at establishing the foundations of a radically new solid-state platform for scalable quantum computation, based on Andreev qubits. This technology will be implemented on interfaces between superconductors and semiconductor nanostructures (metamorphic InAs quantum wells coupled to aluminum superconducting thin films).

A second project concerns the development of GaAs/AlGaAs multiple QW systems for applications in Mid-IR quantum cavity electrodynamics. This allows the manipulation of light-matter interactions through strong coupling between photonic density of states and QW intersubband excitonic transitions giving rise to cavity polaritons, with applications in ultrafast devices for next-generation optical information technology.


Giorgio Biasiol

Last updated on: 06/08/2020 - 10:15